Silicon Carbide Manufacturing Industry
Compared with silicon-based semiconductor materials, the third generation semiconductor materials represented by silicon carbide (SiC) have many advantages such as high breakdown electric field, high saturated electron drift speed, and high thermal conductivity.
Silicon carbide power devices are mainly used in high-power fields, such as new energy vehicles, photovoltaic energy storage, rail transit and other fields, especially in the field of vehicles. In the next few years, applications such as on-board main inverters and charging modules will continue to grow at a high speed.
At present, domestic enterprises have accelerated their entry into the silicon carbide industry chain, and capital expenditure has accelerated, bringing rapid growth of all links of the industry chain.
According to Yole's report, the market size of silicon carbide power devices will exceed $6 billion in 2027, with a compound annual growth rate of more than 30%.
The silicon carbide based power device industry chain mainly includes upstream silicon carbide substrate preparation, epitaxial layer growth, midstream device manufacturing and downstream application markets.
The substrate preparation process is mainly to synthesize high-purity carbon powder and high-purity silicon powder into silicon carbide powder. Under special temperature field, the physical vapor transfer method (PVT method) is mainly used to grow silicon carbide crystal ingot of different sizes, and the silicon carbide substrate is produced after multiple processes.
The epitaxial link is mainly on the silicon carbide substrate, and the epitaxial sheet is formed on the substrate surface by chemical vapor deposition (CVD) method.
Among them, silicon carbide epitaxial sheet is prepared by growing silicon carbide epitaxial layer on conductive silicon carbide substrate, which can be further made into power devices and applied in new energy vehicles, photovoltaic, rail transit, smart grid, aerospace and other fields. The Silicon based gallium nitride (GaN-on-SiC) epitaxial sheet is prepared by growing gallium nitride epitaxial layer on semi-insulated silicon carbide substrate, which can be further prepared into microwave RF devices and applied in 5G communication fields.
From the manufacturing cost structure of silicon carbide devices, the substrate cost is the largest, accounting for 47%; The second is the extended cost, accounting for 23%. These two processes are important components of SiC devices.
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