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Silicon Carbide

Silicon carbide, also called carborundum, is a compound made from silicon and carbon. This chemical compound is found in a mineral called moissanite.The naturally occurring form of silicon carbide is named after a French pharmacist called Dr. Ferdinand Henri Moissan. Moissanite is usually found in very little quantities in meteorites, kimberlite, and corundum. Hence, most commercial silicon carbide is synthetic.Although it is difficult to find naturally occurring silicon carbide on Earth, it is quite abundant in space. Silicon carbide is one of the most useful chemical compounds in the world today. Its application cuts across a large number of industries.

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NY TWO GLOBAL has strong presence at refractory & abrasive industry since ten years ago. By combining sources and optimized expert team, we are widening our business into Alloy, Big Bag and retail industries.We have two 100% owned BFA plants and one big bag plant. By investing some other refractory plants, we enhance our position of production and quality control for a better price.Refractory & Abrasive Raw Material: Silicon Carbide, White Fused Alumina, White Tabular Alumina, Black Silicon Carbide, Fused Mullite, Bauxite,Fused Magnesia ,Dead Burned Magnesia, Calcined Alumina etc. Alloy: High-Medium-Low Carbon Ferro Manganese, High Carbon Ferro Chrome, Low Carbon Ferro Chrome, Silico Manganese, Ferro Silicon, Silicon Metal, manganese Metal, Cored Wires,Incoulants,etc.

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NY TWO GLOBAL has strong presence at refractory & abrasive industry since ten years ago. By combining sources and optimized expert team, we are widening our business into Alloy, Big Bag and retail industries.

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Real-time data testing and inspecting for each phase of production by our own laboratory.

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All our plants meet ISO 9001:2015, ISO 14001:2015 & OHSAS 18001:2007.

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By strong presence in China, India, Turkey, Europe and U.S., we have tight connections with main player in each Industries.

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What is Silicon Carbide

Benefits of Silicon Carbide

Excellent high-temperature performance
The melting point of silicon carbide products is as high as 2700°C, which can maintain its structural stability and strength in high-temperature environments, so it is widely used in high-temperature molten metals, high-temperature heating furnaces, high-temperature petrochemical and other fields.

Strong corrosion resistance
Silicon carbide has excellent corrosion resistance and can work stably for a long time in acid, alkali and oxidative environments.

High hardness and high strength
Silicon carbide has higher hardness and strength than traditional ceramic materials, so it has good wear resistance and impact resistance.

Excellent thermal conductivity and electrical conductivity
Silicon carbide has high thermal conductivity and excellent electrical conductivity, so it is widely used in the manufacture of high-power electronic components and radiators.

Properties of SiC

Polytypism of SiC
SiC is known for its polytypism (different crystalline structures), generated by the stacking of Si and C along the principal axis (C-axis). The AaBbCcAaBbCc stacking generates a 3C-SiC zinc-blende lattice, AaBbAaBb generates 2H-SiC with a wurtzite lattice, and AaBbAaCcAaBbAaC generates a 4H-SiC lattice. Different crystalline forms with varying numbers of atoms per unit cell affect the physical properties of polytypes owing to the varying electronic energy bands and vibrational branches.

Band Structure
Different crystalline forms of SiC have varying bandgap sizes, ranging from 2.4 eV (3C-SiC) to 3.35 eV (2H-SiC), which are crucial for determining their electronic and optical properties. SiC polytypes are indirect semiconductors, which means that the polytype with the smallest bandgap (3C-SiC ) to that with the largest bandgap (2H-SiC) requires the participation of phonons (quantized vibrational modes). Although SiC polytypes are indirect semiconductors, they are excellent candidates for power applications.

Doping
Doping is a physical method used to obtain the desired electrical properties of SiC. In this process, an element, either an acceptor (aluminum/boron/gallium) or a donor (nitrogen/phosphorus), is introduced at the crystal growth stage to alter its conductivity. Since diffusion is not a feasible method to dope SiC, ion implantation with dopant activation via high-temperature heating is used to dope SiC. Previous studies reported the success of doping SiC with nitrogen for applications such as reducing power loss in vertical power device structures and high-frequency applications.

Electrical Properties
Unintentional doping with nitrogen donors during the growth process indicates that they have excess electrons during the growth process, revealing n-type conductivity in SiC. Doped nitrogen atoms replace carbon atoms at lattice sites, varying the ionization energies owing to differing local environments and a specific interference effect. Furthermore, Hall measurements help determine the concentration of nitrogen donors, assuming an equal distribution among various lattice sites.

Chemical Stability
SiC undergoes facile oxidation and forms a silicon dioxide (SiO2) film, which gradually hinders the oxidation process. However, if substances that can remove or break the silicon dioxide film exist simultaneously, SiC can be oxidized further. SiC does not easily dissolve in acids or bases but can be easily attacked by alkaline melts. The primary impurities found in SiC include C and SiO2 and the amount of impurities varies depending on the product type.

Application of Silicon Carbide

01/

Silicon Carbide Used in Military Bulletproof Armor
Silicon carbide is used to manufacture bulletproof armor. The property of this compound that makes it to be applied for such a purpose is its hardness. Bullets and other harmful objects will have to contend with the hard ceramic blocks that silicon carbide forms. Bullets can't penetrate the ceramic blocks.

02/

Silicon Carbide Used in Semiconductors
Silicon carbide becomes a semiconductor when dopants are added to it. Dopants like boron and aluminum added to silicon carbide make it become a p-type semiconductor. On the other hand, dopants such as nitrogen and phosphorus added to silicon carbide make it become an n-type semiconductor. You can read this post for more information about the differences between p-type semiconductors & n-type semiconductors.

03/

Silicon Carbide Used in Abrasives
Silicon carbide is commonly used as an abrasive because of how hard it is. It is used in the manufacture of grinding wheels, cutting tools, and sandpaper. Silicon carbide abrasives are usually cheaper than other abrasives of similar quality. The abrasives are used to grind materials such as steel, aluminum, cast iron, and rubber.

04/

Silicon Carbide Used in Electric Vehicles
Silicon carbide is a better choice over silicon for powering electric vehicles. Electric vehicles powered by silicon carbide are highly efficient and cost-effective. At present, many well-known companies have used silicon carbide to improve efficiency and range when manufacturing electric vehicles, such as Tesla.

05/

Silicon Carbide Used in Jewelry
Structurally similar to diamond, yet more lustrous, cheaper, more durable, and lighter than diamond, silicon carbide is a well-deserved alternative to diamond in the jewelry industry.

06/

Silicon Carbide Used in Fuel
In addition to its other uses, silicon carbide is used as fuel. It is used as a fuel in steel manufacture and produces purer steel than most other fuels. It is also a cheaper and more environmentally-friendly fuel.

How to Choose Silicon Carbide

Identifying your refractory needs
The first step in choosing a suitable refractory material is identifying the application's specific needs. Consider the temperature range the refractory needs to withstand, the chemical environment, and the specific application. This will help narrow down the choices and ensure that suitable refractory material is selected.

Researching refractory materials
Once your requirements are identified, it is essential to research the different types of refractory materials available. Consider the thermal shock resistance, chemical resistance, and other important factors.

Consider Your Budget
When selecting a refractory material, it is vital to consider the budget. Different refractory materials have different prices, and selecting a material that fits within the budget is important. Additionally, it is crucial to consider the total ownership cost, including installation, maintenance, and repair costs.

According to silicon carbide qualification
In order to gain customers'trust, silicon carbide manufacturer usually carry out quality certification of silicon carbide. So when we purchase silicon carbide, we can check the qualification of silicon carbide manufacturer. The more authoritative the certification authority is, the better the silicon carbide is.

How is Silicon Carbide Made?

Lely method

During this process, a granite crucible heats to a very high temperature, usually by way of induction, to sublimate silicon carbide powder. A graphite rod with lower temperature suspends in the gaseous mixture, which inherently allows the pure silicon carbide to deposit and form crystals.

Chemical vapor deposition

Alternatively, manufacturers grow cubic SiC using chemical vapor deposition, which is commonly used in carbon-based synthesis processes and used in the semiconductor industry. In this method, a specialized chemical blend of gases enters a vacuum environment and combines before depositing onto a substrate.

Silicon Carbide Storage Precautions

Orderly storage, the same batch number as far as possible in rows, to avoid mistakes in the process of taking materials.

Silicon carbide micro powder has a strong moisture absorption, try to avoid removing the moisture-proof film storage; this can avoid moisture agglomeration, shorten the drying time.

As far as possible to use the principle of first-in first-out material, to avoid clumping of raw materials due to excessive storage time.

if the ultra-fine silicon carbide powder in transit broken packaging, try to store separately to avoid dust pollution.

It is recommended that the warehouse as far as possible closed, stored separately, and pay attention to moisture, wind and rain.

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FAQ

Q: What is silicon carbide used for?

A: Silicon carbide elements are used today in the melting of glass and non-ferrous metal, heat treatment of metals, float glass production, production of ceramics and electronics components, igniters in pilot lights for gas heaters, etc.The following acute (short-term) health effects may occur immediately or shortly after exposure to Silicon Carbide: * Silicon Carbide can irritate the eyes and nose on contact. * There is limited evidence that Silicon Carbide causes cancer in animals. It may cause cancer of the lungs.

Q: Which are the applications of SiC in electronic devices?

A: Silicon carbide is a semiconductor that is perfectly suited to power applications, thanks above all to its ability to withstand high voltages, up to ten times higher than those usable with silicon. Semiconductors based on silicon carbide offer higher thermal conductivity, higher electron mobility, and lower power losses. SiC diodes and transistors can also operate at higher frequencies and temperatures without compromising reliability. The main applications of SiC devices, such as Schottky diodes and FET/MOSFET transistors, include converters, inverters, power supplies, battery chargers and motor control systems.

Q: Why SiC overcomes Si in power applications?

A: Despite being the most widely used semiconductor in electronics, silicon is beginning to show some limitations, especially in high-power applications. A relevant factor in these applications is the bandgap, or energy gap, offered by the semiconductor. When the bandgap is high, the electronics it uses can be smaller, run faster, and more reliably. It can also operate at higher temperatures, voltages, and frequencies than other semiconductors. While silicon has a bandgap of around 1.12eV, silicon carbide has a nearly three times greater value of around 3.26eV.

Q: Why can SiC handle so high voltages?

A: Power devices, especially MOSFETs, must be able to handle extremely high voltages. Thanks to a dielectric breakdown intensity of the electric field about ten times higher than that of silicon, SiC can reach a very high breakdown voltage, from 600V to a few thousand volts. SiC can use higher doping concentrations than silicon, and the drift layers can be made very thin. The thinner the drift layer, the lower its resistance. In theory, given a high voltage, the resistance of the drift layer per unit area can be reduced to 1/300 of that of silicon.

Q: Why SiC can outperform IGBT at high frequencies?

A: In high-power applications, IGBTs and bipolar transistors have mostly been used in the past, with the aim of reducing the turn-on resistance that occurs at high breakdown voltages. These devices, however, offer significant switching losses, resulting in heat generation issues that limit their use at high frequencies. Using SiC, it is possible to make devices, such as Schottky barrier diodes and MOSFETs, which achieve high voltages, low turn-on resistance and fast operation.

Q: Which impurities are used to dope silicon carbide material?

A: In its pure form, silicon carbide behaves like an electrical insulator. With the controlled addition of impurities or dopants, SiC can behave like a semiconductor. A P-type semiconductor can be obtained by doping it with aluminum, boron, or gallium, while impurities of nitrogen and phosphorus give rise to a N-type semiconductor. Silicon carbide has the ability to conduct electricity under some conditions but not in others, based on factors such as the voltage or intensity of infrared radiation, visible light, and ultraviolet rays. Unlike other materials, silicon carbide is capable of controlling the P-type and N-type regions required for device fabrication over wide ranges. For these reasons, SiC is a material suitable for power devices and able to overcome the limitations offered by silicon.

Q: How can SiC semiconductors achieve better thermal management than silicon?

A: Another important parameter is the thermal conductivity, which is an index of how the semiconductor is able to dissipate the heat it generates. If a semiconductor is not able to dissipate heat effectively, a limitation is introduced on the maximum operating voltage and temperature that the device can withstand. This is another area where silicon carbide outperforms silicon: the thermal conductivity of silicon carbide is 1490 W/m-K, compared to the 150 W/m-K offered by silicon.

Q: How is SiC reverse recover time compared to Si-MOSFET?

A: SiC MOSFETs, like their silicon counterparts, have an internal body diode. One of the main limitations offered by the body diode is the undesired reverse recovery behavior, which occurs when the diode switches off while carrying a positive forward current. The reverse recovery time (trr) thus becomes an important index to define the characteristics of a MOSFET. Figure 2 shows a comparison between the trr of a 1000V Si-based MOSFET and a SiC-based MOSFET. As can be seen, the body diode of the SiC MOSFET is extremely fast: the values of trr and Irr are so small as to be negligible, and the energy loss Err is considerably reduced.

Q: Why is soft turnoff important for short circuit protection?

A: Another important parameter for a SiC MOSFET is the short circuit withstand time (SCWT). Since SiC MOSFETs occupy a very small area of the chip and have a high current density, their ability to withstand short circuits that can cause thermal breaks tends to be lower than that of silicon-based devices. In the case, for example, of a 1.2kV MOSFET with TO247 package, the short-circuit withstand time at Vdd=700V and Vgs=18V is about 8-10 μs. As Vgs decreases, the saturation current decreases and the withstand time increases. As Vdd decreases, less heat is generated and the withstand time is longer. Since the time required to turn off a SiC MOSFET is extremely short, when the turnoff rate Vgs is high, a high dI/dt can cause severe voltage spikes. A soft turnoff should therefore be used to gradually lower the gate voltage, avoiding overvoltage peaks.

Q: Why is isolated gate driver a better choice?

A: Many electronic devices are both low and high voltage circuits, interconnected to each other to perform control and power functions. A traction inverter, for example, typically includes a low voltage primary side (power, communication, and control circuits) and a secondary side (high voltage circuits, motor, power stage and auxiliary circuits). The controller located on the primary side normally uses feedback signals from the high voltage side and is susceptible to possible damage if no isolation barrier is present. An isolation barrier electrically isolates the circuits from the primary to the secondary side forming separate ground references, implementing the so-called galvanic isolation. This prevents unwanted AC or DC signals from being transferred from one side to the other, resulting in damage to the power components.

Q: What are the key uses of silicon carbide?

A: Silicon carbide is a very popular abrasive in modern lapidary owing to its durability and the relatively low cost of the material. It is, therefore, crucial to the art industry. In the manufacturing industry, this compound is used for its hardness in several abrasive machining processes such as honing, grinding, water-jet cutting, and sandblasting.

Q: Comment on the hardness of silicon carbide?

A: Silicon carbide has the ability to form an extremely hard ceramic substance making it useful for applications in automotive brakes and clutches, and also in bulletproof vests. In addition to retaining its strength at up to 1400°C, this ceramic exhibits the highest corrosion resistance among all the advanced ceramics.

Q: Is silicon carbide soluble in water?

A: Silicon carbide is insoluble in water. However, it is soluble in molten alkalis (such as NaOH and KOH) and also molten iron. Silicon carbide can be considered as an organosilicon compound.

Q: Why is silicon carbide so expensive?

A: The cost of a single silicon carbide (SiC) chip can vary depending on several factors, including the specific application, size, complexity, and manufacturing process. Generally, SiC chips tend to be more expensive than traditional silicon chips due to the advanced materials and manufacturing techniques involved.

Q: What is silicon carbide best for?

A: Since its grain fractures readily and maintain a sharp cutting action, silicon-carbide abrasives are generally used for grinding hard, low tensile strength materials such as chilled iron, marble and granite, and materials that need sharp cutting action such as fibers, rubber leather or copper.Fragile: Silicon carbide products are fragile and not suitable for some environments with large particles and easy wear. 4. Poor machinability: The machinability of silicon carbide products is poor, and the processing is difficult, so it is difficult to manufacture silicon carbide products with complex shapes

Q: Is silicon carbide bulletproof?

A: Ceramic materials, such as silicon carbide (SiC), are considered to be ideal for stopping rifle bullets due to their impressive strength and hardiness. SiC can be combined with backing materials and inserted into protective vests to provide vital body protection against any high-velocity projectiles.Silicon carbide does occur in nature as an extremely rare mineral known as moissanite, which was first found in 1893 in Arizona's Canyon Diablo meteor crater.

Q: Does silicon carbide dissolve in water?

A: Silicon carbide is insoluble in water. However, it is soluble in molten alkalis (such as NaOH and KOH) and also molten iron.In July 2022, MIT News announced that cubic boron arsenide could be a possible alternative to silicon. Cubic boron arsenide performs better than silicon at conducting heat and electricity.

Q: Is silicon carbide stronger than diamond?

A: Silicon carbide is hard with a Mohs hardness of 9.5, which is second only to the world's hardest diamond. In addition, silicon carbide has excellent thermal conductivity. It is a kind of semiconductor and can resist oxidation at high temperature.Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC.

Q: Which is better silicon carbide or tungsten carbide?

A: Silicon Carbide in powder form significantly increases compressive and tensile strength [19]. Tungsten carbide (WC) is useful because it is a radiation protection material. WC in nano powder form provides higher protection from radiation and better compressive strength.Tesla announced a new powertrain for a future vehicle that features 75% less silicon carbide components. Chipmakers involved with silicon carbide dipped on the news, although key industry player Aehr Test Systems doesn't see Tesla's announcement as having a big impact on future demand.

Q: Can silicon carbide cut glass?

A: Silicon carbide wheels are useful for cutting glass, quartz, ceramics, titanium, tungsten, zirconium, uranium, beryllium and germanium, fiber, plastics (such as phenolics) and fiber-reinforced plastics.The key dangers being skin contact with a probable carcinogen, or inhalation of crystalline silica that could damage your lungs. Some states in the US, NJ is one example, list silicon carbide as a hazardous substance.

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